f dg 6 322c features absolute maximum ratings t a = 25 o c unless other wise noted symbol parameter n-channel p-channel units v ds s drain-source voltage 25 -25 v v gss gate-source voltage 8 -8 v i d drain current - continuous 0.22 -0.41 a - pulsed 0.65 -1.2 p d maximum power dissipation (note 1) 0.3 w t j ,t stg operating and storage temper ature range -55 to 150 c esd electrostatic discharge rating mil-std-883d human body model (100pf / 1500 ohm) 6 kv thermal characteristics r q ja thermal resistance, junction-to-ambient (note1 ) 415 c/w n-ch 0.22 a , 25 v , r ds(on) = 4.0 w @ v gs = 4.5 v, r ds(on) = 5.0 w @ v gs = 2.7 v. p -ch -0.4 1 a ,-25v , r ds(on) = 1.1 w @ v gs = -4.5v, r ds(on) = 1.5 w @ v gs = -2.7 v. very small package outline sc70-6. very l ow level gate drive requirements allowing direct operation in 3 v circuits (v gs(th) < 1.5 v). gate-source zener fo r esd ruggedness (> 6 kv human body model). sc70-6 supersot t m -6 soic-14 so- 8 sot-8 sot-23 5 3 2 4 1 6 6 q1 q2 sc70-6 g1 d2 s1 d1 s2 g2 mark: .22 pi n 1 smd type smd type smd type product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
dmos electrical characteristics ( t a = 25 o c unless otherwise noted ) symbol parameter conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a n-ch 25 v v gs = 0 v, i d = -250 a p-ch -25 d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c n-ch 25 mv/ o c i d = -250 a , referenced to 25 o c p-ch -22 i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v, n-ch 1 a t j = 5 5c 10 i dss zero gate voltage drain current v ds =-20 v, v gs = 0 v , p-ch -1 a t j = 5 5c -10 i gss gate - body leakage current v gs = 8 v, v ds = 0 v n-ch 100 na v gs = - 8 v, v ds = 0 v p-ch -100 na on characteristics (note 2) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a n-ch 0.65 0.85 1.5 v v ds = v gs , i d = -250 a p-ch -0.65 -0.82 -1.5 d v gs(th) / d t j gate threshold voltage temp. coefficient i d = 250 a , referenced to 25 o c n-ch -2.1 mv/ o c i d = -250 a , referenced to 25 o c p-ch 2.1 r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 0.22 a n-ch 2.6 4 w t j =12 5c 5.3 7 v gs = 2.7 v, i d = 0.19 a 3.7 5 v gs = -4.5 v, i d = -0.41 a p-ch 0.85 1.1 t j =12 5c 1.2 1.9 v gs = -2.7 v, i d = -0.25 a 1.15 1.5 i d(on) on-state drain current v gs = 4.5 v, v ds = 5 v n-ch 0.22 a v gs = -4.5 v, v ds = -5 v p-ch -0.41 g fs forward transconductance v ds = 5 v, i d = 0.22 a n-ch 0.2 s v ds = -5 v, i d = -0.5 a p-ch 0.9 dynamic characteristics c iss input capacitance n-channel n-ch 9.5 pf v ds = 10 v, v gs = 0 v, p-ch 62 c oss output capacitance f = 1.0 mhz n-ch 6 p-channel p-ch 34 c rss reverse transfer capacitance v ds = -10 v, v gs = 0 v, n-ch 1.3 f = 1.0 mhz p-ch 10 f dg 6 322c smd type smd type smd type product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics ( continued ) switching ch aracteristics (note 2 ) symbol parameter conditions type min typ max units t d(on ) turn - on delay time n-channel n-ch 5 10 ns v dd = 5 v, i d = 0.5 a, p-ch 7 15 t r turn - on rise time v gs = 4.5 v, r gen = 50 w n-ch 4.5 10 ns p-ch 8 16 t d(off) turn - off delay time p-channel n-ch 4 8 ns v dd = -5 v, i d = -0.5 a, p-ch 55 80 t f turn - off fall time v gs = -4.5 v, r gen = 50 w n-ch 3.2 7 ns p-ch 35 60 q g total gate charge n-channel n-ch 0.29 0.4 nc v ds = 5 v, i d = 0.22 a, p-ch 1.1 1.5 q gs gate-source charge v gs = 4.5 v n-ch 0.12 nc p- channel p-ch 0.31 q gd gate-drain charge v ds = -5 v, i d = -0.41 a, n-ch 0.03 nc v gs = -4.5 v p-ch 0.29 drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current n-ch 0.25 a p-ch -0.25 v sd drain-source diode forward voltage v gs = 0 v, i s = 0 .5 a (note 2 ) n-ch 0.8 1.2 v v gs = 0 v, i s = -0 .5 a (note 2 ) p-ch -0.85 -1.2 notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. r q ja = 415 o c/w on minimum mounting pad on fr-4 board in still air. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. f dg 6 322c smd type smd type smd type product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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